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| hexfet ? power mosfet fifth generation hexfets from international rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. power dissipation of greater than 0.8w is possible in a typical pcb mount application. description generation v technology ultra low on-resistance dual n-channel mosfet surface mount available in tape & reel dynamic dv/dt rating fast switching lead-free v dss = 55v r ds(on) = 0.050 ? irf7341ipbf www.irf.com 1 parameter typ. max. units r ja maximum junction-to-ambient CCC 62.5 c/w thermal resistance d 1 d 1 d 2 d 2 g 1 s 2 g 2 s1 top view 8 12 3 4 5 6 7 parameter max. units v ds drain- source voltage 55 v i d @ t c = 25c continuous drain current, v gs @ 10v 4.7 i d @ t c = 70c continuous drain current, v gs @ 10v 3.8 a i dm pulsed drain current 38 p d @t c = 25c power dissipation 2.0 p d @t c = 70c power dissipation 1.3 linear derating factor 0.016 w/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10s 30 v e as single pulse avalanche energy 72 dv/dt peak diode recovery dv/dt 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings so-8 pd-95087 downloaded from: http:///
irf7341ipbf 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.059 CCC v/c reference to 25c, i d = 1ma CCC 0.043 0.050 v gs = 10v, i d = 4.7a CCC 0.056 0.065 v gs = 4.5v, i d = 3.8a v gs(th) gate threshold voltage 1.0 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 7.9 CCC CCC s v ds = 10v, i d = 4.5a CCC CCC 2.0 v ds = 55v, v gs = 0v CCC CCC 25 v ds = 55v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 24 36 i d = 4.5a q gs gate-to-source charge CCC 2.3 3.4 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC 7.0 10 v gs = 10v, see fig. 10 t d(on) turn-on delay time CCC 8.3 12 v dd = 28v t r rise time CCC 3.2 4.8 i d = 1.0a t d(off) turn-off delay time CCC 32 48 r g = 6.0 ? t f fall time CCC 13 20 r d = 16 ? , c iss input capacitance CCC 740 CCC v gs = 0v c oss output capacitance CCC 190 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 71 CCC ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 2.0a, v gs = 0v t rr reverse recovery time CCC 60 90 ns t j = 25c, i f = 2.0a q rr reverse recoverycharge CCC 120 170 nc di/dt = -100a/s source-drain ratings and characteristics ! repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 4.7a, di/dt 220a/s, v dd v (br)dss , t j 150c notes: starting t j = 25c, l = 6.5mh r g = 25 ? , i as = 4.7a. (see figure 8) pulse width 300s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec s d g downloaded from: http:/// irf7341ipbf www.irf.com 3 1 10 100 3 4 5 6 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j downloaded from: http:/// irf7341ipbf 4 www.irf.com 0 10 20 30 40 0.040 0.060 0.080 0.100 0.120 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v !" #$ % & " ? # $ ( ? ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.7a 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.1a 3.8a 4.7a 0 .04 0 .06 0 .08 0 .10 0 .12 024681 0 a gs v , gate-to-source voltage (v) i = 4.7a d downloaded from: http:/// irf7341ipbf www.irf.com 5 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss !" % $ ' () # * & & 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.5a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:/// irf7341ipbf 6 www.irf.com so-8 package outlinedimensions are shown in milimeters (inches) so-8 part marking information ! " ## $%$ ! ! ! $ $ & ! downloaded from: http:/// irf7341ipbf www.irf.com 7 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2006 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches) downloaded from: http:/// |
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